![]() The main difference between these two can be found through the ‘α ‘value. The emitter current of this transistor-like ‘IE’ is almost equivalent to the collector current value because of the transistor action. ![]() This factor value is 80 that means the collector current (CC) will be changed by eighty times as compared to the base current. So, this amplification mainly depends on the hfe (amplification factor). Generally in a transistor, when the current supplies throughout the base terminal can be amplified within the current supplying throughout the collector terminal. The output signal’s amplification can be affected by changing the ‘RL’ value. Here, the ‘R1’ resistor is the load resistor whereas the ‘R2’ resistor is the emitter resistor. In the following application circuit, both the resistors like R3 & R4 are used to form a potential divider to decide the VBE (Emitter -Base voltage). Here the magnitude of the input sine wave is amplified from 8mV to 50mV. Here, the voltage supply at the base terminal should be positive as compared to the flow of current from the emitter (E) to collector (C). When the 2N5551 transistor is biased, then the current in the emitter terminal is equivalent to the sum of the remaining two terminals like base & collector. The temperature range must be > -55 centigrade & < +150 centigrade. Always utilize an appropriate base resistor for providing the necessary base current, do not control load over 600mA. Need to maintain 5V – 10V under from maximum ratings to be secure. To obtain better performance from this 2N5551 transistor & also to run for a long time in an electronic circuit, it is advised not to use the voltage above 160V.
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